Table of Contents
Physics Research International
Volume 2010, Article ID 164249, 14 pages
http://dx.doi.org/10.1155/2010/164249
Review Article

Inductively Coupled Plasma Sources and Applications

Production Engineering Laboratory, Panasonic Corporation, 2-7, Matsuba-Cho, Kadoma, Osaka 571-8502, Japan

Received 22 October 2010; Accepted 30 December 2010

Academic Editor: Lorenzo Pavesi

Copyright © 2010 Tomohiro Okumura. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. J. Hopwood, “Review of inductively coupled plasmas for plasma processing,” Plasma Sources Science and Technology, vol. 1, no. 2, pp. 109–116, 1992. View at Publisher · View at Google Scholar · View at Scopus
  2. T. Yoshida, “Future of thermal plasma processing,” Transactions of the Japan Institute of Metals, vol. 30, no. 1, pp. 1–11, 1990. View at Google Scholar
  3. S. Takechi and S. Shinohara, “Role of electron thermal motion in evanescent electromagnetic wave structure of inductively coupled plasma,” Japanese Journal of Applied Physics, vol. 38, no. 2 A, pp. L148–L150, 1999. View at Google Scholar
  4. J. Hopwood, C. R. Guarnieri, S. J. Whitehair, and J. J. Cuomo, “Langmuir probe measurements in an rf induction plasma,” Journal of Vacuum Science & Technology A, vol. 11, pp. 152–156, 1993. View at Google Scholar
  5. J. S. Ogle, “Method and apparatus for producing magnetically-coupled planar plasma,” US patent 4948458, 1990.
  6. L. J. Mahoney, A. E. Wendt, E. Barrios, C. J. Richards, and J. L. Shohet, “Electron-density and energy distributions in a planar inductively coupled discharge,” Journal of Applied Physics, vol. 76, no. 4, pp. 2041–2047, 1994. View at Publisher · View at Google Scholar
  7. M. Edamura, K. Yoshioka, R. Nishio et al., “A novel plasma etching tool with rf-biased Faraday-shield technology: chamber surface reaction control in the etching of nonvolatile materials,” Japanese Journal of Applied Physics, vol. 42, no. 12, pp. 7547–7551, 2003. View at Google Scholar
  8. Y. Kokaze, I. Kimura, T. Jimbo, M. Endo, M. Ueda, and K. Suu, “Coating and etching technologies for piezoelectric and ferroelectric MEMS,” ULVAC Technical Journal, vol. 66E, pp. 13–19, 2007. View at Google Scholar
  9. G. Vinogradov, V. Menagarishvili, A. Kelly, and Y. Hirano, “Advanced dielectric etch using 200/300-mm low residence time GrovyICPTM etcher,” in Proceedings of the 206th Meeting of the Electrochemical Society, p. 899, October 2004.
  10. J. Hoang, C. C. Hsu, and J. P. Chang, “Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. I. Feature scale modeling,” Journal of Vacuum Science and Technology B, vol. 26, no. 6, pp. 1911–1918, 2008. View at Publisher · View at Google Scholar
  11. K. Nakamura, Y. Kuwashita, and H. Sugai, “New inductive rf discharge using an internal metal antenna,” Japanese Journal of Applied Physics, vol. 34, no. 12 B, pp. L1686–L1688, 1995. View at Google Scholar
  12. Y. Setsuhara, “Meter-scale large-area plasma sources for next-generation processes,” Journal of Plasma and Fusion Research, vol. 81, pp. 85–93, 2005. View at Google Scholar
  13. K. I. Arai, “Applied magnetics 3,” Journal of the Magnetics Society of Japan, vol. 24, pp. 1198–1203, 2000. View at Google Scholar
  14. T. Okumura and I. Nakayama, “New inductively coupled plasma source using a multispiral coil,” Review of Scientific Instruments, vol. 66, no. 11, pp. 5262–5265, 1995. View at Publisher · View at Google Scholar
  15. T. Okumura, I. Nakayama, A. Mitsuhashi, and H. Suzuki, “Large area inductively coupled plasma source for dry etching,” in Proceedings of the 131st Committee on Thin Film, pp. 20–24, The Japan Society for the Promotion of Science, 1995.
  16. T. Okumura, S. Watanabe, H. Haraguchi, and I. Nakayama, “Method and device for plasma treatment,” US patent 6177646, 2001.
  17. J. Hopwood, “Planar RF induction plasma coupling efficiency,” Plasma Sources Science and Technology, vol. 3, no. 4, pp. 460–464, 1994. View at Publisher · View at Google Scholar
  18. K. Yoshida, H. Miyamoto, E. Ikawa, and Y. Murao, “Gate electrode etching using a transformer coupled plasma,” Japanese Journal of Applied Physics, vol. 34, pp. 2089–2094, 1995. View at Google Scholar
  19. T. Kimura, T. Okumura, and M. Yoshinaga, “New dry etching technology,” Matsushita Technical Journal, vol. 47, pp. 18–22, 2001. View at Google Scholar
  20. Y. Yanagi, I. Nakayama, and T. Okumura, “Plasma processing method and apparatus,” Japan Patent 3729939, 2005.
  21. T. Okumura, A. Mitsuhashi, and Y. Tanaka, “High density plasma dry etching technology capable of processing 0.25 μm rule devices,” National Technical Reports, vol. 43, pp. 19–25, 1997. View at Google Scholar
  22. T. Okumura, Handbook of Ion Sources, CRC Press, New York, NY, USA, 1995.
  23. H. Suzuki and S. Okita, “Development of high-production dry etching process technology for MEMS and LED devices,” Panasonic Technical Journal, vol. 55, pp. 63–65, 2009. View at Google Scholar
  24. Panasonic Factory Solutions, “Etching equipments,” MEMS Technology, Outlook, pp. 413–418, 2008.
  25. T. Okumura, K. Arai, I. Nakayama, K. Sawada, and Y. Yamada, “Interlayer insulating film formation using multi-spiral coil ICP source,” in Proceedings of the 43rd Spring Meetings, The Japan Society of Applied Physics and Related Societies, 1995, 30a-C-8.
  26. Y. Sasaki, H. Ito, K. Okashita et al., “Production-worthy USJ formation by self-regulatory plasma doping method,” in Proceedings of the the 16th International Conference on Ion Implantation Technology (IIT '08), p. 188, 2008.
  27. S. Adachi, Engineering of Electromagnetic Waves, vol. 41, Corona Publishing Co. Ltd., 1983.
  28. K. Ikeda, T. Okumura, and V. Kolobov, “Three dimensional simulation for inductively coupled plasma reactor employing multi-spiral coil,” Journal of the Vacuum Society of Japan, vol. 50, no. 6, pp. 424–428, 2007. View at Publisher · View at Google Scholar
  29. T. Okumura, I. Nakayama, and B. Mizuno, “Method of plasma doping,” US patent 7575987, 2009.
  30. M. Ryo, Y. Sakurai, T. Kobayashi, and H. Shirai, “Rapid recrystallization of amorphous silicon utilizing very-high-frequency microplasma jet at atmospheric pressure,” Japanese Journal of Applied Physics, vol. 45, no. 10 B, pp. 8484–8487, 2006. View at Publisher · View at Google Scholar · View at Scopus