Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography

Table 4

Characteristics of target formation between psec and nsec.

	Units
Pulse duration	Sec.	10 pico	10 nano
Pulse energy	mJ	2.0	2.7
Delay time between pre pulse laser and; CO2 laser	au.	1 and 2	1 and 2
		√ Shape of laser side: dome; shape of opposite side: dish	√ Shape of laser side: dish; Shape of opposite side: dish
Characteristic of target formation		√ Target formation scheme; shift to opposite side of lasers incident translation speed: slow	√ Target formation scheme: shift to opposite side of lasers incident translation speed: fast
		Target expansion speed in diameter: fast; Dispersion of target: fine	Target expansion speed in diameter: slow; Dispersion of target: coarse