Table of Contents
Physics Research International
Volume 2013, Article ID 645620, 14 pages
Research Article

Analytical Approach to Model and Diagnostic Distribution of Dopant in an Implanted-Heterojunction Rectifier Accounting for Mechanical Stress

1Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod 603950, Russia
2Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il’insky Street, Nizhny Novgorod 603950, Russia

Received 9 April 2013; Revised 20 June 2013; Accepted 4 July 2013

Academic Editor: Ali Hussain Reshak

Copyright © 2013 E. L. Pankratov and E. A. Bulaeva. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We calculate spatiotemporal distributions of dopant in an implanted-heterojunction rectifier. We analyzed the influence of inhomogeneity of heterostructure on dopant distribution. The influence of radiation processing of materials of the heterostructure, which has been done during ion implantation, on properties of the heterostructure has been also analyzed. It has been shown that radiation processing of materials of heterostructure leads to a decrease in mechanical stress in heterostructure. Our calculations have been done by using analytical approach, which gives us the possibility to obtain all results without joining solutions on all interfaces of heterostructure.