Table of Contents
Physics Research International
Volume 2013 (2013), Article ID 645620, 14 pages
http://dx.doi.org/10.1155/2013/645620
Research Article

Analytical Approach to Model and Diagnostic Distribution of Dopant in an Implanted-Heterojunction Rectifier Accounting for Mechanical Stress

1Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod 603950, Russia
2Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il’insky Street, Nizhny Novgorod 603950, Russia

Received 9 April 2013; Revised 20 June 2013; Accepted 4 July 2013

Academic Editor: Ali Hussain Reshak

Copyright © 2013 E. L. Pankratov and E. A. Bulaeva. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

E. L. Pankratov and E. A. Bulaeva, “Analytical Approach to Model and Diagnostic Distribution of Dopant in an Implanted-Heterojunction Rectifier Accounting for Mechanical Stress,” Physics Research International, vol. 2013, Article ID 645620, 14 pages, 2013. doi:10.1155/2013/645620