Analytical Approach to Model and Diagnostic Distribution of Dopant in an Implanted-Heterojunction Rectifier Accounting for Mechanical Stress

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</svg> for epitaxial layer before (curve 1) and after (curve 2) radiation processing.</table>

Physics Research International

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Figure 3

Figure 3: Analytical Approach to Model and Diagnostic Distribution of Dopant in an Implanted-Heterojunction Rectifier Accounting for Mechanical Stress 

Figure 3 | Analytical Approach to Model and Diagnostic Distribution of Dopant in an Implanted-Heterojunction Rectifier Accounting for Mechanical Stress 