Table of Contents
Physics Research International
Volume 2014, Article ID 782357, 11 pages
Research Article

Structural and Optical Investigations of Heterostructures Based on :Si Solid Solutions Obtained by MOCVD

Joint Physics Laboratory of Nano-Heterostructures and Semiconductor Materials, Voronezh State University, Universitetskaya Square 1, Voronezh 394006, Russia

Received 14 May 2014; Revised 4 July 2014; Accepted 8 July 2014; Published 23 July 2014

Academic Editor: Zhiqiang Mao

Copyright © 2014 P. V. Seredin. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We investigated MOCVD epitaxial heterostructures based on AlxGa1−xAs ternary solid solutions, obtained in the range of compositions and doped with high concentrations of phosphorus and silicon atoms. Using the methods of high-resolution X-ray diffraction, scanning electron microscopy, X-ray microanalysis, Raman spectroscopy, and photoluminescence spectroscopy we have shown that grown epitaxial films represent five-component (AlxGa1−xAs1−yPy)1−zSiz solid solutions. The implementation of silicon in solid solution with a concentration of ~ 0.01 at.% leads to the formation of the structure with deep levels, DX centers, the occurrence of which fundamentally affects the energy characteristics of received materials.