Structural and Optical Investigations of Heterostructures Based on Al_𝑥Ga_1−𝑥As_𝑦P_1−𝑦:Si Solid Solutions Obtained by MOCVD

Figure 1

Reciprocal q-space maps for symmetric (400) and asymmetric (511) nods of Al_xGa_1−xAs_yP_1−y:Si/GaAs (100) heterostructures. (a), (c), (e), (g), and (i) map of symmetric (400) nods. (b), (d), (f), (h), and (j) map of asymmetric (511) nods. (a) and (b) EM2350: GaAs; (c) and (d) EM2346: Al_0.26Ga_0.74As; (e) and (f) EM2343: (Al_0.33Ga_0.67As_0.995P_0.005)_0.9997Si_0.0003; (g) and (h) EM2355: (Al_0.426Ga_0.574As_0.975P_0.025)_0.999Si_0.001; (i) and (j) EM2356: (Al_0.43Ga_0.57As_0.977P_0.023)_0.997Si_0.003.

(a)

(b)

(c)

(d)

(e)

(f)

(g)

(h)

(i)

(j)