Structural and Optical Investigations of Heterostructures Based on Al_𝑥Ga_1−𝑥As_𝑦P_1−𝑦:Si Solid Solutions Obtained by MOCVD

Table 3

Results of high-resolution XRD diffraction.

Sample	Composition,; 𝑥	Lattice parameter 𝑎^𝜈,; Å	Strain coefficient of the alloy,; 𝜀
EM2350
𝑇=800; flow = 0; carrier = 3.6×10^16	GaAs	5.6533	—
EM2346
𝑇=800; flow = 0; carrier = 3.1×10^16	Al0.26Ga0.74As	5.6555	0.00040
EM2438
𝑇=700; flow = 10; carrier = 3.4×10^17	Al0.22Ga0.78As:Si(10^−5)	5.6553	0.00036
EM2449
𝑇=800; flow = 100; carrier = 6.5×10^17	(Al0.20Ga0.80As)0.999Si0.001	5.6549	0.00029
EM2342
𝑇=800; flow = 100; carrier = 7.85×10^17	Al0.35Ga0.65As0.9999P0.0001:Si(10^−5)	5.6564	0.00056
EM2343
𝑇=800; flow = 200; carrier = 8.19×10^17	(Al0.33Ga0.67As0.995P0.005)0.9997Si0.0003	5.6554	0.00038
EM2355
𝑇=800; flow = 200; carrier = 7.07×10^17	(Al0.426Ga0.574As0.975P0.025)0.999Si0.001	5.6517	−0.00027
EM2356
𝑇=800; flow = 300; carrier = 4.56×10^17	(Al0.43Ga0.57As0.977P0.023)0.997Si0.003	5.6518	−0.00026