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Volume 2017, Article ID 2362084, 7 pages
Research Article

Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates

1Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
2Institute of Energy Research and Physical Technologies, Clausthal University of Technology and Energy Research Center of Lower Saxony, Clausthal-Zellerfeld, Germany

Correspondence should be addressed to Ikai Lo; wt.ude.usysn.liam@oliaki

Received 28 July 2017; Accepted 13 September 2017; Published 18 October 2017

Academic Editor: Guosong Wu

Copyright © 2017 Yu-Chiao Lin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


-plane GaN thin films were grown on LiAlO2 substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of -plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along 110. According to high-resolution X-ray diffraction analysis, Li5GaO4 was observed on the interface between GaN and LiAlO2 substrate. The formation of Li5GaO4 would influence the surface morphology and crystal quality.