Conductive Atomic Force Microscopy Study of the Resistive Switching in Yttria-Stabilized Zirconia Films with Au Nanoparticles

<div>High-resolution X-TEM image of an YSZ (3 nm)/Au (1 nm)/YSZ (3 nm)/SiO<sub>2</sub>/<i>n</i><sup>+</sup>-Si(100) structure annealed in Ar ambient at 450°C for 1 hour.</div>

Scanning

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Figure 2

Figure 2: Conductive Atomic Force Microscopy Study of the Resistive Switching in Yttria-Stabilized Zirconia Films with Au Nanoparticles 