Table of Contents
Smart Materials Research
Volume 2011, Article ID 374915, 5 pages
Research Article

Asymmetry of Polarization Reversal and Current-Voltage Characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-Substrate Structures

1Institute of Physics, NASU 46, Prospect Nauki, 03680 Kyiv, Ukraine
2IEMN-DOAE-MIMM Team, CNRS, UMR 8520, Bat. P3, Cité Scientifique USTL, 59652 Villeneuve d’Ascq, France

Received 8 November 2011; Revised 19 December 2011; Accepted 22 December 2011

Academic Editor: David Vokoun

Copyright © 2011 S. L. Bravina et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. S. L. Bravina, E. Cattan, N. V. Morozovsky, D. Remiens, and G. Wang, “Pyroelectric characterization of hysteresis phenomena asymmetry in PZT film on silicon structures,” Integrated Ferroelectrics, vol. 73, no. 1, pp. 27–35, 2005. View at Publisher · View at Google Scholar · View at Scopus
  2. S. L. Bravina, E. A. Eliseev, N. V. Morozovsky, D. Remiens, A. Grosman, and C. Soyer, “Pyroactive PZT-film/Si, PZT-film/Por-Si/Si and P(VDF/TrFE)-film/Si structures for integrated IR-sensorics,” in Pyroelectric Materials and Sensors, D. Remiens, Ed., pp. 1–23, Research Signpost, Kerala, India, 2007. View at Google Scholar
  3. S. L. Bravina, N. V. Morozovsky, D. Remiens, and C. Soyer, “Examination of operation of PZT-film-Si-substrate structures as pyroactive memory elements,” Ferroelectrics, vol. 353, no. 1, pp. 193–201, 2007. View at Publisher · View at Google Scholar · View at Scopus
  4. T. Haccart, E. Cattan, and D. Remiens, “Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation,” Semiconductor Physics, Quantum Electronics and Optoelectronics, vol. 5, no. 1, pp. 78–88, 2002. View at Google Scholar
  5. B. Jaffe, W. R. Cook, and H. Jaffe, Piezoelectric Ceramic, Academic Press, London, UK, 1971.
  6. S. L. Bravina, N. V. Morozovsky, E. Dogheche, and D. Remiens, “Fast humidity sensing and switching of LiNbO3 films on silicon,” Molecular Crystals & Liquid Crystals, vol. 535, no. 1, pp. 196–203, 2011. View at Google Scholar
  7. S. L. Bravina and N. V. Morozovsky, “Pyroelectric effect in switching systems metal-ferro-semiconductor-metal based on proustite-pyrargyrite,” Phys & Techn Poluprov, vol. 18, pp. 1944–1949, 1984. View at Google Scholar
  8. D. Fu, K. Suzuki, K. Kato, M. Minakata, and H. Suzuky, “Investigation of domain switching and retention in orientated PbZr0,3Ti0,7O3 thin film by scanning force microscopy,” Japanese Journal of Applied Physics, vol. 41, no. 11B, part 2, pp. 6724–6729, 2002. View at Google Scholar