Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays

<div>The influence of DD effects on the carrier recombination rate of TID effects.</div>

Science and Technology of Nuclear Installations

Figure 8: Simulation of Ionizing/Displacement Synergistic Effects on NPN Bipolar Transistors Irradiated by Mixed Neutrons and Gamma Rays 