On the Mechanism of Secondary Recrystallization in Grain Oriented Silicon Iron
G. Abbruzzese,1I. Ciancaglioni,1and A. Campopiano1
Received07 Aug 1987
Abstract
The final Goss texture in grain oriented silicon iron develops by a secondary
recrystallization process in presence of second phase particles.A sheet of Fe-3%Si was annealed in a gradient furnace in order to establish the
exact temperature of the beginning of abnormal growth.Measurements of grain size distributions of the different orientations and in
particular of the {110} 〈001〉 grains (within a cone of ±10° width around the rolling
direction) were performed at different stages of grain growth. The so identified Goss
grains show a different growth kinetic in comparison with the matrix. The results are
analysed and discussed in the framework of the statistical model of grain growth
assuming a texture selection process operating.The agreement between experimental and theoretical results is quite good and
allows to state that the main mechanism for the secondary recrystallization in silicon
iron is a selective process of grain growth which is controlled by the presence of an
inhibitor (dispersion of second phase particles). As a consequence an initial larger
grain size for {110} 〈001〉 oriented grains is not a necessary condition to get the final
Goss texture.