Table of Contents
Textures and Microstructures
Volume 8 –9

On the Mechanism of Secondary Recrystallization in Grain Oriented Silicon Iron

Centro Sviluppo Materiali, Roma, Italy

Received 7 August 1987

Copyright © 1988 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The final Goss texture in grain oriented silicon iron develops by a secondary recrystallization process in presence of second phase particles.

A sheet of Fe-3%Si was annealed in a gradient furnace in order to establish the exact temperature of the beginning of abnormal growth.

Measurements of grain size distributions of the different orientations and in particular of the {110} 001 grains (within a cone of ±10° width around the rolling direction) were performed at different stages of grain growth. The so identified Goss grains show a different growth kinetic in comparison with the matrix. The results are analysed and discussed in the framework of the statistical model of grain growth assuming a texture selection process operating.

The agreement between experimental and theoretical results is quite good and allows to state that the main mechanism for the secondary recrystallization in silicon iron is a selective process of grain growth which is controlled by the presence of an inhibitor (dispersion of second phase particles). As a consequence an initial larger grain size for {110} 001 oriented grains is not a necessary condition to get the final Goss texture.