Abstract
For angular dispersive and energy dispersive phase, texture, and stress analysis of compact samples (TiAl) and thin TiN layers, an electroluminescence detector and a Si(Li) semiconductor detector were applied. The parameters and application properties of the detectors are described. For angular dispersive measurements higher reflection intensities and better peak-to-background ratios can be attained, in comparison to conventional methods, by using multichannel pulse accumulation and mathematical spectrum evaluation.In energy dispersive texture and stress measurements, reflection data from several lattice planes can be obtained simultaneously. In stress measurement, variations of lattice spacings in the order of 10-3 are reliably detectable. In principle, texture and stress information can be received from one measurement.