Table of Contents
Textures and Microstructures
Volume 32 (1999), Issue 1-4, Pages 137-151

Mechanism of Orientation Selectivity During Grain Growth of Secondary Recrystallization in Fe-3%Si Alloy

Electromagnetic Materials, Steel Research Laboratories, Nippon Steel Corporation, 20-1 Shintomi, Futtsu, Chiba-ken 293-8511, USA

Accepted 28 September 1997

Copyright © 1999 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Selective growth of {110}001 grains in the temperature gradient annealing has been studied in Fe–3%Si alloy. As grains grow, the average deviation angle from the ideal {110}001 orientation becomes smaller and orientation distribution changes corresponding to that of coincidence grains in the matrix. Secondary recrystallization temperature depends on the orientation of secondary recrystallized grain and sharper {110} 001 grains grow preferentially at lower temperatures.

These phenomena are explained by modified Hillert's model of grain growth. Interfacial energy of coincidence boundary is lower than that of general boundary. Therefore, sharper {110}001 grains, which have higher frequency of coincidence grains in the primary recrystallized matrix, suffer lower pinning effect from the second phase particles and thus grow preferentially at lower temperatures.