Table of Contents
Textures and Microstructures
Volume 34 (2000), Issue 2-3, Pages 105-118

Texture Control in Thin Films Using Ion Bombardment

G. S. Was,1 H. Ji,2 and Z. Ma1

1Department of Nuclear Engineering and Radiological Sciences, The University of Michigan, 1921 Cooley Bldg., Ann Arbor, MI 48109-2104, USA
2Department of Physics, The University of Michigan, 1921 Cooley Bldg., Ann Arbor, MI 48109-2104, USA

Received 8 October 1999

Copyright © 2000 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The development of texture in thin films under ion bombardment is believed to occur due to the preferential growth of the aligned grains in the film relative to the unaligned grains. The difference in growth rates between aligned and unaligned grains results in the development of texture with increasing thickness. Both out-of-plane (fiber) and in-plane texture can be controlled during ion bombardment. Experiments were performed to create a (110) out-of-plane texture in thin aluminum films and to create a (110) in-plane texture in niobium films. Results showed that the texture in both cases increases in strength with depth, and that for 500 nm Al films, the (110) texture was stronger than the thermodynamically-preferred (111) texture obtained by physical vapor deposition. Results confirm a texturing mechanism based on ion channeling and preferential sputtering.