CIB: An Improved Communication Architecture for Real-Time Monitoring of Aerospace Materials, Instruments, and Sensors on the ISS
Figure 6
Current versus voltage transfer curves for given gate voltages of the two flight silicon carbide (SiC) Junction Field Effect Transistors (JFETs). (a) shows characteristics for room temperature packaged JFETs, for preflight, and after over six months of flight. (b) shows the characteristics for the high temperature packaged SiC JFET (image courtesy of NASA).
