Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide
Figure 2
Raman spectra measured for Si/SiO2/HfO2 sample, excitation wavelength 266 nm. Black solid line represents as-deposited sample, red points represents sample annealed at 400°C, green points represents sample annealed at 600°C, blue points represents sample annealed at 800°C.
