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The Scientific World Journal
Volume 2013 (2013), Article ID 470347, 13 pages
http://dx.doi.org/10.1155/2013/470347
Review Article

Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

Green Strategic Energy Research Institute, Department of Electronic Engineering, Sejong University, 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea

Received 21 August 2013; Accepted 3 October 2013

Academic Editors: M. Q. Fan and J. E. Hustad

Copyright © 2013 Atteq ur Rehman and Soo Hong Lee. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. International Technology Roadmap for Photovoltaic (ITRPV), SEMI PV Group Europe, 2013, http://www.itrpv.net/.
  2. J. Schmidt and K. Bothe, “Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon,” Physical Review B, vol. 69, no. 2, Article ID 024107, pp. 241071–241078, 2004. View at Google Scholar · View at Scopus
  3. S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, “Minority carrier lifetime degradation in boron-doped Czochralski silicon,” Journal of Applied Physics, vol. 90, no. 5, pp. 2397–2404, 2001. View at Publisher · View at Google Scholar · View at Scopus
  4. J. Schmidt, A. G. Aberle, and R. Hezel, “Investigation of carrier lifetime instabilities in Cz-grown silicon,” in Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference, pp. 13–18, October 1997. View at Scopus
  5. D. Macdonald and L. J. Geerligs, “Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon,” Applied Physics Letters, vol. 85, no. 18, pp. 4061–4063, 2004. View at Publisher · View at Google Scholar · View at Scopus
  6. SUNPOWER, 2013, http://us.sunpowercorp.com/.
  7. Sanyo Solar, 2013, http://panasonic.net/energy/solar/.
  8. Yingli Solar, 2013, http://www.yinglisolar.com/.
  9. Energy Research Centre of Netharland (ECN), 2013, http://www.ecn.nl/home/.
  10. Bosch Solar Energy, 2013, http://www.bosch-solarenergy.com/en/bosch_se_online/landing_page/landing_page_1.html.
  11. Sunvia Solar, 2013, http://www.suniva.com/.
  12. Power from the Sun-Fraunhofer ISE, 2013, http://www.ise.fraunhofer.de/en.
  13. D. Lotfi and E. Hatem, “Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer,” Nanoscale Research Letters, vol. 7, pp. 1–7, 2012. View at Publisher · View at Google Scholar
  14. S. P. Phang and D. MacDonald, “Direct comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon,” Journal of Applied Physics, vol. 109, no. 7, Article ID 073521, 2011. View at Publisher · View at Google Scholar · View at Scopus
  15. M. A. Kessler, T. Ohrdes, B. Wolpensinger, and N. Harder, “Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr3 diffusion processes,” Semiconductor Science and Technology, vol. 25, no. 5, Article ID 055001, 2010. View at Publisher · View at Google Scholar · View at Scopus
  16. K. Ryu, A. Upadhyaya, H. J. Song, C. J. Choi, A. Rohatgi, and Y. W. Ok, “Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells,” Applied Physics Letters, vol. 101, Article ID 073902, 2012. View at Publisher · View at Google Scholar
  17. S. P. Phang, W. Liang, B. Wolpensinger, M. A. Kessler, and D. Macdonald, “Tradeoffs between impurity gettering, bulk degradation, and surface passivation of Boron-Rich layers on silicon solar cells,” IEEE Journal of Photovoltaics, vol. 3, no. 1, pp. 261–266, 2013. View at Google Scholar
  18. F. W. Chen, T. A. Li, and J. E. Cotter, “Passivation of boron emitters on n-type silicon by plasma-enhanced chemical vapor deposited silicon nitride,” Applied Physics Letters, vol. 88, no. 26, Article ID 263514, 2006. View at Publisher · View at Google Scholar · View at Scopus
  19. B. Hoex, J. Gielis, M. C. M. Van de Sanden, and W. M. Kessels, “On the c–Si surface passivation mechanism by the negative-charge-dielectric Al2O3,” Journal of Applied Physics, vol. 104, no. 11, Article ID 113703, 2008. View at Publisher · View at Google Scholar · View at Scopus
  20. B. Hoex, J. Schmidt, R. Bock, P. P. Altermatt, M. C. M. Van De Sanden, and W. M. M. Kessels, “Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3,” Applied Physics Letters, vol. 91, no. 11, Article ID 112107, 2007. View at Publisher · View at Google Scholar · View at Scopus
  21. B. Hoex, S. B. S. Heil, E. Langereis, M. C. M. Van De Banden, and W. M. M. Kessels, “Ultralow surface recombination of c–Si substrates passivated by plasma-assisted atomic layer deposited Al2O3,” Applied Physics Letters, vol. 89, no. 4, Article ID 042112, 2006. View at Publisher · View at Google Scholar · View at Scopus
  22. G. Dingemans and E. Kessels, “Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells,” Journal of Vacuum Science & Technology A, vol. 30, Article ID 040802, 2012. View at Publisher · View at Google Scholar
  23. V. D. Mihailetchi, Y. Komatsu, and L. J. Geerligs, “Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells,” Applied Physics Letters, vol. 92, no. 6, Article ID 063510, 2008. View at Publisher · View at Google Scholar · View at Scopus
  24. V. D. Mihailetchi, J. Jourdan, A. Edler et al., “In Screen printed n-type silicon solar cells for industrial application,” in Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition, pp. 6–10, Valencia, Spain, 2010.
  25. C. Schmiga, M. Rauer, M. Rüdiger et al., “In Aluminium-doped p+ silicon for rear emitters and back surface fields: results and potentials of industrial n-and p-type solar cells,” in Proceedings of 25th European Photovoltaic Solar Energy Conference, pp. 1163–1168, Valencia, Spain, 2010.
  26. C. Schmiga, M. Hörteis, M. Rauer et al., “In Large-area n-type silicon solar cells with printed contacts and aluminium-alloyed rear emitter,” in Proceedings of the 24th European Photovoltaic Solar Energy Conference, pp. 1167–1170, Hamburg, Germany, 2009.
  27. M. Rauer, C. Schmiga, M. Hermle, and S. W. Glunz, “In Passivation of screen-printed aluminium-alloyed emitters for back junction n-type silicon solar cells,” in Proceedings of the 24th European Photovoltaic Solar Energy Conference, pp. 20–25, 2009.
  28. C. Schmiga, M. Hermle, and S. W. Glunz, “In Towards 20% efficient n-type silicon solar cells with screen-printed aluminium-alloyed rear emitter,” in Proceedings of 23rd European Photovoltaic Solar Energy Conference, pp. 982–987, 2008.
  29. R. Bock, J. Schmidt, and R. Brendel, “N-type silicon solar cells with surface-passivated screen-printed aluminium-alloyed rear emitter,” Physica Status Solidi, vol. 2, no. 6, pp. 248–250, 2008. View at Publisher · View at Google Scholar · View at Scopus
  30. R. M. Swanson, “Developments in silicon solar cells,” in Proceedings of the IEEE International Electron Devices Meeting (IEDM '07), pp. 359–362, December 2007. View at Publisher · View at Google Scholar · View at Scopus
  31. F. Granek, M. Hermle, D. M. Huljić, O. Schultz-Wittmann, and S. W. Glunz, “Enhanced lateral current transport via the front N+ diffused layer of N-type high-efficiency back-junction back-contact silicon solar cells,” Progress in Photovoltaics, vol. 17, no. 1, pp. 47–56, 2009. View at Publisher · View at Google Scholar · View at Scopus
  32. J. Zhao and A. Wang, “High efficiency rear emitter pert cells on CZ and FZ n-type silicon substrates,” in Proceedings of the IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC '06), pp. 996–999, May 2006. View at Publisher · View at Google Scholar · View at Scopus
  33. R. Woehl, R. Keding, M. Rudiger et al., “In 20% Efficient screen-printed and aluminum-alloyed back-contact back-junction cells and interconnection scheme of point-shaped metalized cells,” in Proceedings of the 37th IEEE Conference on Photovoltaic Specialists, pp. 000048–000052, 2011.
  34. P. Cousins, D. Smith, H.-C. Luan et al., “Generation 3: improved performance at lower cost,” in Proceedings of the 35th IEEE Photovoltaic Specialists Conference (PVSC '10), pp. 275–278, June 2010. View at Publisher · View at Google Scholar · View at Scopus
  35. S. Glunz, J. Benick, D. Biro et al., “n-Type silicon-enabling efficiencies >20% in industrial production,” in Proceedings of the 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, pp. 50–56, June 2010. View at Publisher · View at Google Scholar · View at Scopus
  36. J. Zhao, A. Wang, P. P. Altermatt, M. A. Green, J. P. Rakotoniaina, and O. Breitenstein, “High efficiency pert cells on n-type silicon substrates,” in Proceedings of the 29th IEEE Photovoltaic Specialists Conference, pp. 218–221, May 2002. View at Scopus
  37. L. Geerligs, I. G. Romijn, A. Burgers et al., “In Progress in low-cost n-type silicon solar cell technology,” in Proceedings of the 38th IEEE Photovoltaic Specialists Conference (PVSC '12), pp. 001701–001704, 2012.
  38. N. Guillevin, B. J. B. Heurtault, L. J. Geerligs, and A. W. Weeber, “Development towards 20% efficient Si MWT solar cells for low-cost industrial production,” Energy Procedia, vol. 8, pp. 9–16, 2011. View at Google Scholar
  39. T. Kinoshita, D. Fujishima, A. Yano et al., “In The approaches for high efficiency HIT solar cell with very thin (<100μm) silicon wafer over 23%,” in Proceedings of the 26th European Photovoltaic Solar Energy Congerence Proceedings, pp. 871–874, 2011.
  40. N. Bateman, P. Sullivan, C. Reichel, J. Benick, and M. Hermle, “High quality ion implanted boron emitters in an interdigitated back contact solar cell with 20% efficiency,” in Proceedings of the 1st International Conference on Crystalline Silicon Photovoltaics (SiliconPV '11), vol. 8, pp. 509–514, April 2011. View at Publisher · View at Google Scholar · View at Scopus
  41. C. Gong, E. Van Kerschaver, J. Robbelein et al., “Screen-printed aluminum-alloyed P+ emitter on high-efficiency N-type interdigitated back-contact silicon solar cells,” IEEE Electron Device Letters, vol. 31, no. 6, pp. 576–578, 2010. View at Publisher · View at Google Scholar · View at Scopus
  42. R. Bock, S. Mau, J. Schmidt, and R. Brendel, “Back-junction back-contact n -type silicon solar cells with screen-printed aluminum-alloyed emitter,” Applied Physics Letters, vol. 96, no. 26, Article ID 263507, 2010. View at Publisher · View at Google Scholar · View at Scopus
  43. F. Castaño, D. Morecroft, M. Cascant et al., “In Industrially feasible >19% efficiency IBC cells for pilot line processing,” in Proceedings of the 37th IEEE Conference on Photovoltaic Specialists, pp. 001038–001042, 2011.
  44. R. Woehl, J. Krause, F. Granek, and D. Biro, “19.7% efficient all-screen-printed back-contact back-junction silicon solar cell with aluminum-alloyed emitter,” IEEE Electron Device Letters, vol. 32, no. 3, pp. 345–347, 2011. View at Publisher · View at Google Scholar · View at Scopus
  45. Institute for Solarenergy Research Hamelin (ISFH), 2013, http://www.isfh.de/index.php?dm=1&&_l=1.
  46. J. Benick, B. Hoex, G. Dingemans et al., “In High-efficiency n-type silicon solar cells with front side boron emitter,” in Proceedings of the 24th European Photovoltaic Solar Energy Conference, pp. 863–870, 2009.
  47. P. Altermatt, H. Plagwitz, R. Bock et al., “In The surface recombination velocity at boron-doped emitters: comparison between various passivation techniques,” in Proceedings of the 21st European Photovoltaic Solar Energy Conference, pp. 647–650, 2006.
  48. J. Zhao, J. Schmidt, A. Wang, G. Zhang, B. S. Richards, and M. A. Green, “Performance instability in n-type pert silicon solar cells,” in Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, pp. 923–926, May 2003. View at Scopus
  49. A. Richter, S. Henneck, J. Benick, H. örteis M, M. Hermle, and S. Glunz, “In Firing stable Al2O3/SiNx layer stack passivation for the front side boron emitter of n-type silicon solar cells,” in Proceedings of 25th European Photovoltaic Solar Energy Conference and 5th WC PEC, pp. 1453–1459, 2010.
  50. A. Burgers, L. Geerligs, A. Carr et al., “In 19.5% efficient n-type si solar cells made in production,” in Proceedings of the 25th Eurpean photovoltaic Solar Energy Conference, Hamburg, Germany, 2011.
  51. A. Burgers, R. Naber, A. Carr et al., “In 19% efficient n-type Si solar cells made in pilot production,” in Proceedings of 25th European Photovoltaic Solar Energy Conference, pp. 106–1109, 2010.
  52. D. Lillington, J. Kukulka, S. Bunyan, G. Garlick, and B. Sater, “In Development of 8 cm × 8 cm silicon gridded back solar cell for space station,” in Proceedings of 19th IEEE Photovoltaic Specialists Conference, pp. 489–493, 1987.
  53. D. R. Lillington, J. R. Kukulka, A. V. Mason, B. L. Sater, and J. Sanchez, “Optimization of silicon 8 cm x 8 cm wrapthrough space station cells for “on orbit” operation,” in Proceedings of the 20th IEEE Photovoltaic Specialists Conference, pp. 934–939, September 1988. View at Scopus
  54. B. Cavicchi, N. Mardesich, and S. Bunyan, “In Large area wraparound cell development,” in Proceedings of 17th Photovoltaic Specialists Conference, pp. 128–133, 1984.
  55. N. Guillevin, B. Heurtault, B. van Aken et al., “High efficiency n-type metal wrap through cells and modules,” Energy Procedia, vol. 27, pp. 610–616, 2012. View at Publisher · View at Google Scholar
  56. N. Guillevin, L. Geerligs, R. Naber, W. Eerenstein, and A. Weeber, “In High efficiency n-type metal wrap through Si solar cells for low-cost industrial production,” in Proceedings of 25th European Photovoltaic Solar Energy Conference, pp. 1429–1431, 2010.
  57. W. Zhao, J. Wang, Y. Shen et al., “In 0.35% Absolute efficiency gain of bifacial N-type Si Solar cells by industrial metal wrap through technology,” in Proceedings of the 38th IEEE, Photovoltaic Specialists Conference, pp. 2289–2291, 2012.
  58. D. L. Meier, V. Chandrasekaran, H. P. Davis et al., “n-type, ion-implanted silicon solar cells and modules,” IEEE Journal of Photovoltaics, vol. 1, no. 2, pp. 123–129, 2011. View at Publisher · View at Google Scholar · View at Scopus
  59. A. Goodrich, P. Hacke, Q. Wang et al., “A wafer-based monocrystalline silicon photovoltaics road map: utilizing known technology improvement opportunities for further reductions in manufacturing costs,” Solar Energy Materials and Solar Cells, vol. 114, pp. 110–135, 2013. View at Publisher · View at Google Scholar
  60. W. P. Mulligan, D. H. Rose, M. J. Cudzinovic et al., “In Manufacture of solar cells with 21% efficiency,” in Proceedings of the 19th European Photovoltaic Solar Energy Conference, p. 387, 2004.
  61. D. Song, J. Xiong, Z. Hu et al., “In Progress in n-type Si solar cell and module technology for high efficiency and low cost,” in Proceedings of 38th IEEE, Photovoltaic Specialists Conference, pp. 3004–3008, 2012.
  62. R. Low, A. Gupta, N. Bateman et al., “High efficiency selective emitter enabled through patterned ion implantation,” in Proceedings of the 35th IEEE Photovoltaic Specialists Conference (PVSC '10), pp. 1440–1445, June 2010. View at Publisher · View at Google Scholar · View at Scopus
  63. J. Benick, A. Richter, T.-T. A. Li et al., “Effect of a post-deposition anneal ON Al2O3/Si interface properties,” in Proceedings of the 35th IEEE Photovoltaic Specialists Conference (PVSC '10), pp. 891–896, June 2010. View at Publisher · View at Google Scholar · View at Scopus
  64. J. Benick, N. Bateman, and M. Hermle, “In Very low emitter saturation current densities on ion implanted boron emitters,” in Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC '10), pp. 1169–1173, 2010.
  65. A. Gupta, R. Low, N. Bateman et al., “In High efficiency selective emitter cells using in-situ patterned ion implantation,” in Proceedings of the 25th European Photovoltaic Solar Energy Conference, pp. 1158–1162, 2010.
  66. Varian Semiconductor Equipment Associates, 2013, http://www.vsea.com/.
  67. A. Rohatgi, D. L. Meier, B. McPherson et al., “High-throughput ion-implantation for low-cost high-efficiency silicon solar cells,” in Proceedings of the 6th International Conference on Materials for Advanced Technologies (ICMAT '11), vol. 15, pp. 10–19, July 2011. View at Publisher · View at Google Scholar · View at Scopus
  68. A. Rohatgi and D. Meier, “Developing novel low-cost, high-throughput processing techniques for 20%-efficient monocrystalline silicon solar cells,” Photovoltaics International, vol. 10, pp. 87–93, 2010. View at Google Scholar
  69. M. Taguchi, K. Kawamoto, S. Tsuge et al., “HIT cells—high-efficiency crystalline Si cells with novel structure,” Progress in Photovoltaics, vol. 8, no. 5, pp. 503–514, 2000. View at Google Scholar
  70. T. Mishima, M. Taguchi, H. Sakata, and E. Maruyama, “Development status of high-efficiency HIT solar cells,” Solar Energy Materials and Solar Cells, vol. 95, no. 1, pp. 18–21, 2011. View at Publisher · View at Google Scholar · View at Scopus
  71. E. Maruyama, A. Terakawa, M. Taguchi et al., “Sanyo's challenges to the development of high-efficiency HIT solar cells and the expansion of HIT business,” in Proceedings of the IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC '06), pp. 1455–1460, May 2006. View at Publisher · View at Google Scholar · View at Scopus
  72. M. Taguchi, Y. Tsunomura, H. Inoue et al., “In High efficiency HIT solar cell on thin (<100μm) silicon wafer,” in Proceedings of the 24th European Photovoltaic Solar Energy Conference, pp. 1690–1693, Hamburg, Germany, 2009.
  73. K. Maki, D. Fujishima, H. Inoue et al., “In High-efficiency HIT solar cells with a very thin structure enabling a high Voc,” in Proceedings of the 37th IEEE, Photovoltaic Specialists Conference (PVSC '11), pp. 57–61, 2011.
  74. E. Yablonovitch, T. Gmitter, R. M. Swanson, and Y. H. Kwark, “A 720 mV open circuit voltage SiOx:c–Si:SiOx double heterostructure solar cell,” Applied Physics Letters, vol. 47, no. 11, pp. 1211–1213, 1985. View at Publisher · View at Google Scholar · View at Scopus
  75. R. R. King, R. A. Sinton, and R. M. Swanson, “Studies of diffused phosphorus emitters: saturation current, surface recombination velocity, and quantum efficiency,” IEEE Transactions on Electron Devices, vol. 37, no. 2, pp. 365–371, 1990. View at Publisher · View at Google Scholar · View at Scopus
  76. D. De Ceuster, P. Cousins, D. Rose, D. Vicente, P. Tipones, and W. Mulligan, “In Low Cost, high volume production of >19% efficiency silicon solar cells,” in Proceedings of the 22nd European Photovoltaic Solar Energy Conference, pp. 816–819, 2007.
  77. A. Weeber, R. Naber, N. Guillevin et al., “In Status of n-type solar cells for low-cost industrial production,” in Proceedings of th 24th European Photovoltaic Solar Energy Conference, pp. 891–895, 2009.
  78. I. G. Romijn, B. B. van Aken, J. Anker et al., “In Industrial implementation of efficiency improvements in n-type solar cells and modules,” in Proceedings of 27th European Photovoltaic Solar Energy Conference, p. 533, 2012.
  79. I. Romijn, J. Anker, A. Burgers et al., “In Industrial n-type solar cells with >20% cell efficiency,” in Proceedings of the China PV Technology International Conference (CPTIC ’10), March 2013.