Review Article
Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry
Table 1
Best results for various n-type high efficiency cell structures.
| Type | Structure | Metallization | (mV) | Efficiency (%) | References |
|
Front surface field (FSF) rear emitter cells | n+np+ PERT (rear emitter cell) | Plated Ag metallization | 702 | 22.7 | [32] | n+np+ (Al rear emitter) | Front evaporated TiPdAg, Rear full area evaporated | 649 | 20.1 | [28] | n+np+ (back contacts) | Screen printed | 647 | 20.0 | [33] |
|
Back surface field (BSF) front emitter cells | IBC | ā | 721 | 24.2 | [34] | PERL (p+nn+) | Evaporated front grid, rear full area evaporated | 705 | 23.9 | [35] | PERT (p+nn+) | Evaporated front grid + plating, rear full area evaporated | 695 | 21.9 | [36] | p+nn+ (PANDA cell) | Stencil printed | 649 | 20.0 | [37] | MWT (p+nn+) (back contacts) | Screen printed | 644 | 19.7 | [38] |
| Heterojunction with intrinsic thin layer (HIT) solar cell | HIT cell | Screen printed | 745 | 23.7 | [39] |
| Ion implanted emitter cells | IBC | Evaporated Al/Ti/Pd/Ag | 650.1 | 20.0 | [40] |
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