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The Scientific World Journal
Volume 2013, Article ID 538297, 4 pages
Research Article

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China

Received 25 October 2013; Accepted 24 November 2013

Academic Editors: W. Hu, S. Jit, and F. Yue

Copyright © 2013 Changda Zheng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [1 citation]

The following is the list of published articles that have cited the current article.

  • Yadan Zhu, Taiping Lu, Xiaorun Zhou, Guangzhou Zhao, Hailiang Dong, Zhigang Jia, Xuguang Liu, and Bingshe Xu, “ Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N 2 /H 2 mixture gas ,” Applied Physics Express, vol. 10, no. 6, pp. 061004, 2017. View at Publisher · View at Google Scholar