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The Scientific World Journal
Volume 2013, Article ID 538297, 4 pages
http://dx.doi.org/10.1155/2013/538297
Research Article

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China

Received 25 October 2013; Accepted 24 November 2013

Academic Editors: W. Hu, S. Jit, and F. Yue

Copyright © 2013 Changda Zheng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Changda Zheng, Li Wang, Chunlan Mo, Wenqing Fang, and Fengyi Jiang, “Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate,” The Scientific World Journal, vol. 2013, Article ID 538297, 4 pages, 2013. https://doi.org/10.1155/2013/538297.