The Scientific World Journal / 2013 / Article / Fig 2

Research Article

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

Figure 2

DCXRD Omega-2theta rocking curve on GaN (0002) plan for three samples. The center peak is defined as GaN (002) peak. InGaN diffraction peak is marked as zero order peak.
538297.fig.002

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.