Research Article

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

Figure 3

The FLM images for three samples. The selected wavelength of dichroic mirror is 430 nm and barrier filter is 450 nm in the test.
538297.fig.003a
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538297.fig.003b
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538297.fig.003c
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