The Scientific World Journal / 2013 / Article / Fig 4

Research Article

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

Figure 4

(a) PL spectra of the three samples are excitated by He-Ge 325 nm laser at room temperature. (b) Schematic diagram of optical cavity effects of the MQWs light from the surface and GaN/Si interface reflection.

We are committed to sharing findings related to COVID-19 as quickly as possible. We will be providing unlimited waivers of publication charges for accepted research articles as well as case reports and case series related to COVID-19. Review articles are excluded from this waiver policy. Sign up here as a reviewer to help fast-track new submissions.