The Scientific World Journal / 2013 / Article / Fig 4

Research Article

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

Figure 4

(a) PL spectra of the three samples are excitated by He-Ge 325 nm laser at room temperature. (b) Schematic diagram of optical cavity effects of the MQWs light from the surface and GaN/Si interface reflection.

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.