The Scientific World Journal / 2013 / Article / Fig 4

Research Article

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

Figure 4

(a) PL spectra of the three samples are excitated by He-Ge 325 nm laser at room temperature. (b) Schematic diagram of optical cavity effects of the MQWs light from the surface and GaN/Si interface reflection.
538297.fig.004a
(a)
538297.fig.004b
(b)

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