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The Scientific World Journal
Volume 2014, Article ID 136340, 6 pages
Research Article

100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

Institut d’Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université Lille I, BP 60069, 59652 Villeneuve d’Ascq Cedex, France

Received 30 August 2013; Accepted 5 January 2014; Published 23 February 2014

Academic Editors: Y.-S. Lin, J. F. Paris, and J.-H. Park

Copyright © 2014 Cyrille Gardès et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies of 100/125 GHz together with minimum noise figure  dB and associated gain  dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.