100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

<table>Small-signal equivalent circuit with noise sources for AlSb/InAs HEMT at <svg height="15.4" id="M105" style="vertical-align:-3.24037pt" version="1.1" viewbox="0 0 60.162498 15.4" width="60.162498" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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h-35l1 26q39 4 76 13.5t58.5 17t27.5 7.5q16 0 9 -26zM387 375q-11 11 -38.5 20t-51.5 9q-45 0 -79 -23q-46 -32 -77.5 -107.5t-31.5 -143.5q0 -40 9.5 -58.5t23.5 -18.5q40 0 113.5 70t99.5 118z" id="x1D451"></path></g><g transform="matrix(.012,-0,0,-.012,19.279,15.187)"><path d="M352 391q0 -31 -27 -44q-14 -7 -24 6q-39 48 -84 48q-23 0 -39.5 -15t-16.5 -40q0 -43 73 -90q49 -32 70 -58t21 -57q0 -58 -62 -105.5t-129 -47.5q-40 0 -75.5 25t-35.5 52q0 28 32 46q7 4 15 3t11 -6q19 -31 48.5 -50.5t54.5 -19.5q34 0 54 19.5t20 42.5q0 43 -65 81
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<g transform="matrix(.017,-0,0,-.017,29.088,11.112)"><path d="M535 323h-483v50h483v-50zM535 138h-483v50h483v-50z" id="x3D"></path></g><g transform="matrix(.017,-0,0,-.017,43.774,11.112)"><path d="M249 635q70 0 116 -43t46 -105q0 -46 -28 -80q-22 -25 -80 -64q62 -35 97 -75t35 -99q0 -81 -63 -131t-135 -50q-83 0 -137.5 45.5t-54.5 123.5q0 52 45 95q29 28 89 64q-109 62 -109 155q0 66 50.5 115t128.5 49zM238 603q-42 0 -67.5 -31t-25.5 -72q0 -50 32.5 -79.5
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q0 -76 10 -138.5t37 -107.5t69 -45q32 0 55.5 25t35.5 68.5t17.5 91.5t5.5 105t-5.5 105.5t-18 92t-36 68t-56.5 24.5z" id="x30"></path></g>
</svg> mV.</table>

The Scientific World Journal

fig8

Figure 8

Figure 8: 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications 