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The Scientific World Journal
Volume 2014 (2014), Article ID 475423, 6 pages
http://dx.doi.org/10.1155/2014/475423
Research Article

Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

Department of Physics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589, Saudi Arabia

Received 20 April 2014; Accepted 14 July 2014; Published 22 July 2014

Academic Editor: Paolo Colantonio

Copyright © 2014 Moustafa Ahmed. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.