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The Scientific World Journal
Volume 2014, Article ID 475423, 6 pages
http://dx.doi.org/10.1155/2014/475423
Research Article

Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

Department of Physics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589, Saudi Arabia

Received 20 April 2014; Accepted 14 July 2014; Published 22 July 2014

Academic Editor: Paolo Colantonio

Copyright © 2014 Moustafa Ahmed. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Moustafa Ahmed, “Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers,” The Scientific World Journal, vol. 2014, Article ID 475423, 6 pages, 2014. https://doi.org/10.1155/2014/475423.