The Scientific World Journal
Volume 2014, Article ID 475423, 6 pages
http://dx.doi.org/10.1155/2014/475423
Research Article
Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
Department of Physics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589, Saudi Arabia
Received 20 April 2014; Accepted 14 July 2014; Published 22 July 2014
Academic Editor: Paolo Colantonio
Copyright © 2014 Moustafa Ahmed. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
How to Cite this Article
Moustafa Ahmed, “Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers,” The Scientific World Journal, vol. 2014, Article ID 475423, 6 pages, 2014. https://doi.org/10.1155/2014/475423.