Effects of Gate Stack Structural and Process Defectivity on High- Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

Figure 10

Hole trap density, , and interface trap density, , as a function of density of precursor under a different stress temperature for (a) thin HfO₂ and (b) thick HfO₂.

(a)

(b)