Effects of Gate Stack Structural and Process Defectivity on High-<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.2145996pt" id="M1" height="12.9477pt" version="1.1" viewBox="0 -12.7331 8.99546 12.9477" width="8.99546pt"><g transform="matrix(.018,0,0,-0.018,0,0)"><path id="g113-108" d="M480 416C480 431 465 448 438 448C388 448 312 383 252 330C217 299 188 273 155 237H153L257 680C262 700 263 712 253 712C240 712 183 684 97 674L92 648L126 647C166 646 172 645 163 606L23 -6L29 -12C51 -5 77 2 107 8C115 62 130 128 142 180C153 193 179 220 204 241C231 170 259 106 288 54C317 0 336 -12 358 -12C381 -12 423 2 477 80L460 100C434 74 408 54 398 54C385 54 374 65 351 107C326 154 282 241 263 299C296 332 351 377 403 377C424 377 436 372 445 368C449 366 456 368 462 375C472 386 480 402 480 416Z"></path></g></svg> Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

<table><svg height="12.1839pt" id="M49" style="vertical-align:-3.37758pt" version="1.1" viewbox="0 -8.80632 10.2668 12.1839" width="10.2668pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M405 650H141L135 622C222 616 230 610 215 535L133 116C118 41 113 33 29 28L23 0H289L295 28C209 33 205 40 219 116L298 535C312 609 317 616 399 622L405 650Z" id="g113-74"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="428" vert-adv-y="428"></glyph.data></g><g transform="matrix(.0095,0,0,-0.0095,4.918,3.264)"><path d="M538 684C542 703 539 710 529 710C512 710 455 682 363 674L361 644H396C444 644 448 642 438 594L405 438C373 450 347 451 336 451C288 451 200 416 147 374C69 312 24 207 24 113C24 29 60 -12 94 -12C126 -12 156 4 196 30C231 53 296 100 346 166H348L328 81C311 10 325 -12 348 -12C380 -12 450 24 512 98L495 125C466 97 431 70 417 70C408 70 408 80 411 98L538 684ZM390 373L361 240C336 196 210 56 145 56C132 56 113 73 113 131C113 216 156 338 220 379C243 394 266 402 303 402C331 402 375 388 390 373Z" id="g50-101"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="564" vert-adv-y="564"></glyph.data></g></svg>-<svg height="14.5074pt" id="M50" style="vertical-align:-5.701079pt" version="1.1" viewbox="0 -8.80632 13.1228 14.5074" width="13.1228pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M697 650H468L461 623L492 619C539 613 547 605 518 546C481 471 367 264 278 116H276C239 278 197 500 186 567C180 604 185 613 226 619L252 623L260 650H24L17 623C78 617 92 613 108 533L216 -11H247C365 200 515 462 560 529C616 612 624 615 689 623L697 650Z" id="g113-87"></path><glyph.data ascent="3473" descent="-2876" horiz-adv-x="709" vert-adv-y="709"></glyph.data></g><g transform="matrix(.0095,0,0,-0.0095,7.641,3.264)"><path d="M554 433L549 437C539 437 513 441 503 443C481 447 456 451 436 451C354 451 268 415 216 368C150 308 99 205 99 106C99 24 136 -12 165 -12C196 -12 243 14 268 33C318 70 374 118 415 181H419L395 39C374 -84 332 -149 295 -175C269 -193 245 -197 212 -197C137 -197 93 -156 76 -102C71 -87 61 -87 51 -96C36 -110 24 -130 24 -147C24 -183 76 -257 171 -257C226 -257 285 -227 323 -200C387 -155 455 -76 480 94C499 225 538 391 554 433ZM460 386C457 361 438 287 426 254C408 218 373 176 332 133C294 93 246 61 217 61C198 61 186 80 186 122C186 167 206 250 231 294C262 349 288 375 317 387C334 394 358 400 381 400C413 400 439 393 460 386Z" id="g50-104"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="578" vert-adv-y="578"></glyph.data></g></svg> characteristics of simulated devices and comparison with experimental data in [<a href="/journals/tswj/2014/490829/#B18">17</a>].</table>

The Scientific World Journal

fig2

Figure 2

Figure 2: Effects of Gate Stack Structural and Process Defectivity on High-<svg xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg" style="vertical-align:-0.2145996pt" id="M1" height="12.9477pt" version="1.1" viewBox="0 -12.7331 8.99546 12.9477" width="8.99546pt"><g transform="matrix(.018,0,0,-0.018,0,0)"><path id="g113-108" d="M480 416C480 431 465 448 438 448C388 448 312 383 252 330C217 299 188 273 155 237H153L257 680C262 700 263 712 253 712C240 712 183 684 97 674L92 648L126 647C166 646 172 645 163 606L23 -6L29 -12C51 -5 77 2 107 8C115 62 130 128 142 180C153 193 179 220 204 241C231 170 259 106 288 54C317 0 336 -12 358 -12C381 -12 423 2 477 80L460 100C434 74 408 54 398 54C385 54 374 65 351 107C326 154 282 241 263 299C296 332 351 377 403 377C424 377 436 372 445 368C449 366 456 368 462 375C472 386 480 402 480 416Z"></path></g></svg> Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs 

Figure 2 | Effects of Gate Stack Structural and Process Defectivity on High- Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs 