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The Scientific World Journal
Volume 2015, Article ID 426541, 14 pages
Research Article

A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays

MIND/IN2UB Departament d’Electrònica, Universitat de Barcelona, C/Martí i Franquès 1, 08028 Barcelona, Spain

Received 16 December 2014; Accepted 19 February 2015

Academic Editor: Michael L. P. Tan

Copyright © 2015 S. Illera et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [3 citations]

The following is the list of published articles that have cited the current article.

  • S. Illera, J. D. Prades, and A. Cirera, “Elastic tunneling charge transport mechanisms in silicon quantum dots /SiO2 thin films and superlattices,” Journal of Applied Physics, vol. 117, no. 17, pp. 174307, 2015. View at Publisher · View at Google Scholar
  • Nuria Garcia-Castello, Sergio Illera, Joan Daniel Prades, Stefano Ossicini, Albert Cirera, and Roberto Guerra, “ Energetics and carrier transport in doped Si/SiO 2 quantum dots ,” Nanoscale, vol. 7, no. 29, pp. 12564–12571, 2015. View at Publisher · View at Google Scholar
  • Rana Asgari Sabet, and Mostafa Sahrai, “Near-infrared light controlling using the photonic crystal with coupled quantum dots in defect layer,” Materials Research Express, vol. 6, no. 1, pp. 016204, 2018. View at Publisher · View at Google Scholar