The Scientific World Journal

Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications


Publishing date
03 Jan 2014
Status
Published
Submission deadline
25 Oct 2013

Lead Editor
Guest Editors

1Max-Born-Institute, 12489 Berlin, Germany, and Key Laboratory of Polar Materials and Devices of MOE, East China Normal University, Shanghai 200241, China

2Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi 221005, India

3National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China


Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications

Description

Advances in the growth, analysis, and characterization of various narrow-gap semiconductors and low-dimensional optoelectronic device structures have brought revolution into the modern day’s information and communication technology including optical communication and computing systems. The main objective of this special issue is to include the recent advances in the experimental and theoretical research related to the growth, transport, and infrared properties of narrow-gap semiconductors and the fabrication, characterization, analysis, and simulation of various low-dimensional devices including quantum and nanostructures using narrow-gap semiconductors for optoelectronic applications. The aim of this special issue is to bring together in one publication the outstanding papers reporting new and original theoretical, experimental, and/or simulation works in the following areas related to optoelectronic applications. Potential topics include, but are not limited to:

  • II-VI narrow-gap semiconductors (e.g., HgCdTe) and their heterostructures
  • Narrow-gap III-V semiconductors (e.g., InAs, GaSb, and AlSb) and their heterostructures and nanostructures
  • Narrow-gap tunneling phenomena
  • Spintronic and spin-photonic devices (e.g., spin LEDs)
  • Low-dimensional structures for infrared detectors, lasers, LEDs, terahertz emitters, and detectors
  • Physics and infrared applications of quantum structures including quantum well, quantum dots, and superlattices
  • Laser cooling of II-VI semiconductors

Before submission authors should carefully read over the journal’s Author Guidelines, which are located at http://www.hindawi.com/journals/tswj/guidelines/. Prospective authors should submit an electronic copy of their complete manuscript through the journal Manuscript Tracking System at http://mts.hindawi.com/submit/journals/tswj/optics/nagap/ according to the following timetable:


Articles

  • Special Issue
  • - Volume 2014
  • - Article ID 492521
  • - Editorial

Narrow-Gap Semiconductors and Low-Dimensional Structures for Optoelectronic Applications

Fangyu Yue | Satyabrata Jit | Weida Hu
  • Special Issue
  • - Volume 2014
  • - Article ID 284929
  • - Research Article

Second-Order Nonlinearity in Triangular Lattice Perforated Gold Film due to Surface Plasmas Resonance

Renlong Zhou | Xiaoshuang Chen | ... | Jie Zhan
  • Special Issue
  • - Volume 2014
  • - Article ID 704830
  • - Research Article

Valence Band Structure of and Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

D. P. Samajdar | S. Dhar
  • Special Issue
  • - Volume 2013
  • - Article ID 538297
  • - Research Article

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

Changda Zheng | Li Wang | ... | Fengyi Jiang
  • Special Issue
  • - Volume 2013
  • - Article ID 931980
  • - Research Article

Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN HEMTs

Chen-hui Yu | Qing-zhou Luo | ... | Pei-sheng Liu
  • Special Issue
  • - Volume 2013
  • - Article ID 954146
  • - Research Article

Phosphorescent Molecularly Doped Light-Emitting Diodes with Blended Polymer Host and Wide Emission Spectra

Jun Wang | Jun Gou | Weizhi Li
  • Special Issue
  • - Volume 2013
  • - Article ID 245310
  • - Research Article

Optical Limiting Using the Two-Photon Absorption Electrical Modulation Effect in HgCdTe Photodiode

Haoyang Cui | Junjie Yang | ... | Zhong Tang
  • Special Issue
  • - Volume 2013
  • - Article ID 213091
  • - Research Article

The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

Haoyang Cui | Yongpeng Xu | ... | Zhong Tang
The Scientific World Journal
 Journal metrics
Acceptance rate24%
Submission to final decision97 days
Acceptance to publication42 days
CiteScore1.430
Impact Factor-
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