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VLSI Design
Volume 3 (1995), Issue 2, Pages 145-158
http://dx.doi.org/10.1155/1995/47065

Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation

1Department of Mathematics and the Institute for Scientific Computation, Texas A&M University, College Station, TX 77843, USA
2School of Mathematics, , University of Minnesota, Minneapolis, Minnesota 55455, USA
3Department of Mathematics, Northwestern University, Evanston, IL 60208, USA
4Division of Applied Mathematics, Brown University, Providence, RI 02912, USA

Received 1 January 1994

Copyright © 1995 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In this paper we introduce a new method for numerically solving the equations of the hydrodynamic model for semiconductor devices in two space dimensions. The method combines a standard mixed finite element method, used to obtain directly an approximation to the electric field, with the so-called Runge-Kutta Discontinuous Galerkin (RKDG) method, originally devised for numerically solving multi-dimensional hyperbolic systems of conservation laws, which is applied here to the convective part of the equations. Numerical simulations showing the performance of the new method are displayed, and the results compared with those obtained by using Essentially Nonoscillatory (ENO) finite difference schemes. From the perspective of device modeling, these methods are robust, since they are capable of encompassing broad parameter ranges, including those for which shock formation is possible. The simulations presented here are for Gallium Arsenide at room temperature, but we have tested them much more generally with considerable success.