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VLSI Design
Volume 3 (1995), Issue 2, Pages 201-210

Resonant Tunneling in the Quantum Hydrodynamic Model

Department of Computer Science and Department of Mathematics, Duke University, Durham 27708-0129, NC, USA

Received 1 December 1993

Copyright © 1995 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The phenomenon of resonant tunneling is simulated and analyzed in the quantum hydrodynamic (QHD) model for semiconductor devices. Simulations of a parabolic well resonant tunneling diode at 77 K are presented which show multiple regions of negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the QHD equations to show multiple regions of NDR.

Resonant tunneling (and NDR) depend on the quantum interference of electron wavefunctions and therefore on the phases of the wavefunctions. An analysis of the QHD equations using a moment expansion of the Wigner-Boltzmann equation indicates how phase information is retained in the hydrodynamic equations.