VLSI Design

VLSI Design / 1995 / Article
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Classical and Quantum Hydrodynamic Device Models and Energy Transport

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Volume 3 |Article ID 093452 | https://doi.org/10.1155/1995/93452

Jing-Rong Zhou, David K. Ferry, "2-D Simulation of Quantum Effects in Small Semiconductor Devices Using Quantum Hydrodynamic Equations", VLSI Design, vol. 3, Article ID 093452, 19 pages, 1995. https://doi.org/10.1155/1995/93452

2-D Simulation of Quantum Effects in Small Semiconductor Devices Using Quantum Hydrodynamic Equations

Received01 Nov 1993

Abstract

We discuss the basis of a set of quantum hydrodynamic equations and the use of this set of equations in the two-dimensional simulation of quantum effects in deep submicron semiconductor devices. The equations are obtained from the Wigner function equation-of-motion. Explicit quantum correction is built into these equations by using the quantum mechanical expression of the moments of the Wigner function, and its physical implication is clearly explained. These equations are then applied to numerical simulation of various small semiconductor devices, which demonstrate expected quantum effects, such as barrier penetration and repulsion. These effects modify the electron density distribution and current density distribution, and consequently cause a change of the total current flow by 10-15 per cent for the simulated HEMT devices. Our work suggests that the inclusion of quantum effects into the simulation of deep submicron and ultra-submicron semiconductor devices is necessary.

Copyright © 1995 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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