VLSI Design

VLSI Design / 1998 / Article
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Computational Electronics

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Volume 8 |Article ID 012905 | https://doi.org/10.1155/1998/12905

Carl L. Gardner, Christian Ringhofer, "Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode", VLSI Design, vol. 8, Article ID 012905, 4 pages, 1998. https://doi.org/10.1155/1998/12905

Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode


Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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