VLSI Design

VLSI Design / 1998 / Article
Special Issue

Computational Electronics

View this Special Issue

Open Access

Volume 8 |Article ID 012905 | https://doi.org/10.1155/1998/12905

Carl L. Gardner, Christian Ringhofer, "Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode", VLSI Design, vol. 8, Article ID 012905, 4 pages, 1998. https://doi.org/10.1155/1998/12905

Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode

Abstract

Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


More related articles

 PDF Download Citation Citation
 Order printed copiesOrder
Views430
Downloads413
Citations

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.