Abstract

The Boltzmann transport equation (BTE) for multiple bands is solved by the spherical harmonic approach. The distribution function is obtained for energies greater than 3 eV. The BTE is solved self consistently with the Poisson equation for a one dimensional npn bipolar junction transistor (BJT). The novel features are: the use of boundary fitted curvilinear grid, and Scharfetter Gummel type discretization of the BTE.