VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 019218 | https://doi.org/10.1155/1998/19218

L. R. C. Fonseca, A. N. Korotkov, K. K. Likharev, "SENECA: a New Program for the Analysis of Single-Electron Devices", VLSI Design, vol. 6, Article ID 019218, 4 pages, 1998. https://doi.org/10.1155/1998/19218

SENECA: a New Program for the Analysis of Single-Electron Devices

Abstract

We describe a new and efficient method for numerical study of the dynamics and statistics of single-electron systems presenting arbitrary combinations of small tunnel junctions, capacitances, and voltage sources. The method is based on the numerical solution of a master equation describing the time evolution of the probabilities of the electric charge states of the system, with iterative refining of the operational set of states. The method is able to describe very small deviations from the “classical” behavior of a system, due to finite speed of applied signals, thermal activation, and macroscopic quantum tunneling of charge (cotunneling). As an illustration, we briefly study the leakage rate in single-electron traps and the accuracy of several devices (turnstile, pump, and a hybrid circuit) suitable as standards of dc current.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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