Analysis and Simulation of Extended Hydrodynamic Models: The Multi-Valley Gunn Oscillator and MESFET Symmetries

Abstract

We introduce a novel two carrier hydrodynamic model, which incorporates higher dimensional geometric effects into a one dimensional model. We study (1) the GaAs device in the notched oscillator circuit, and, (2) a MESFET channel, and its symmetries. We present new mathematical results for a reduced model.