Table of Contents
VLSI Design
Volume 6, Issue 1-4, Pages 65-67
http://dx.doi.org/10.1155/1998/23890

One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects

1Dept. of Electronic Eng., Fac. of Engineering, The University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
2Texas Instruments Tsukuba R&D Center, 17 Miyukigaoka, Ibaraki, Tsukuba 305, Japan

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Rimon Ikeno, Hiroshi Ito, and Kunihiro Asada, “One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects,” VLSI Design, vol. 6, no. 1-4, pp. 65-67, 1998. https://doi.org/10.1155/1998/23890.