J. B. Roldan, F. Gamiz, J. A. Lopez-Villanueva, J. E. Carceller, "Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization", VLSI Design, vol. 6, Article ID 026390, 4 pages, 1998. https://doi.org/10.1155/1998/26390
Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization
A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.
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