VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 026390 | https://doi.org/10.1155/1998/26390

J. B. Roldan, F. Gamiz, J. A. Lopez-Villanueva, J. E. Carceller, "Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization", VLSI Design, vol. 6, Article ID 026390, 4 pages, 1998. https://doi.org/10.1155/1998/26390

Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization

Abstract

A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-dimensional Poisson equation including inversion-layer quantization and drift-diffusion equations has been developed. This simulator has been applied to the study of electron transport in normal operation conditions for different submicron channel length devices. Some interesting non-local effects such as electron velocity overshoot can be observed.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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