Table of Contents
VLSI Design
Volume 8, Issue 1-4, Pages 59-64

Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation

1Institut fü Mikrosystemtechnik, Albert-Ludwigs-Universität Freiburg, Am Flughafen 17, Freiburg 79110, Germany
2CEM2 (CNRS UMR 5507), Université Montpellier II, Montpellier Cedex 5 34095, France
3INFM, Dipartimento di Scienza dei Materiali, Università di Leece, Via Arnesano, Lecce 73100, Italy
4Dipartimento di Elettronica Informatica e Sistemistica, Università di Bologna, viale Risorgimento 2, Bologna 40136, Italy
5Institut für Theoretische Physik II, Westfälische Wilhelms-Universität, Wilhelm--Klemm-Str. 10, Münster 48149, Germany
6lNFM, Dipartimento di Fisica, Università di Modena, Via Campi 213/A, Modena 41100, Italy

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [1 citation]

The following is the list of published articles that have cited the current article.

  • R. Brunetti, P. Golinelli, M. Rudan, and L. Reggiani, “Anisotropy of thermal conductivity and energy-flux relaxation time of hot electrons in semiconductors,” Journal of Applied Physics, vol. 85, no. 3, pp. 1572, 1999. View at Publisher · View at Google Scholar