VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 032480 | https://doi.org/10.1155/1998/32480

Wenchao Liang, Daniel C. Kerr, Neil Goldsman, Isaak D. Mayergoyz, "Hydrodynamic Device Simulation with New State Variables Specially Chosen for a Block Gummel Iterative Approach", VLSI Design, vol. 6, Article ID 032480, 5 pages, 1998. https://doi.org/10.1155/1998/32480

Hydrodynamic Device Simulation with New State Variables Specially Chosen for a Block Gummel Iterative Approach

Abstract

A new numerical formulation for solving the hydrodynamic model of semiconductor devices is presented. The method is based on using new variables to transform the conventional hydrodynamic equations into forms which facilitate numerical evaluation with a block Gummel approach. To demonstrate the new method, we apply it to model a 0.35 μm 2-D LDD MOSFET, where robust convergence properties are observed.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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