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Michael S. Obrecht, Edwin L. Heasell, J. Vlach, Mohamed I. Elmasry, "Transient Phenomena in High Speed Bipolar Devices", VLSI Design, vol. 8, Article ID 035648, 6 pages, 1998. https://doi.org/10.1155/1998/35648
Transient Phenomena in High Speed Bipolar Devices
A new numerical method is applied to the analysis of the charge partitioning in the quasi-neutral base of a BJT. The results show that the conventional, 1:2 collector/ emitter partitioning is not valid in general. High level injection increases the collector fraction, whilst fast switching decreases it.
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