VLSI Design

VLSI Design / 1998 / Article
Special Issue

Computational Electronics

View this Special Issue

Open Access

Volume 8 |Article ID 35648 | 6 pages | https://doi.org/10.1155/1998/35648

Transient Phenomena in High Speed Bipolar Devices


A new numerical method is applied to the analysis of the charge partitioning in the quasi-neutral base of a BJT. The results show that the conventional, 1:2 collector/ emitter partitioning is not valid in general. High level injection increases the collector fraction, whilst fast switching decreases it.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

More related articles

0 Views | 0 Downloads | 0 Citations
 PDF  Download Citation  Citation
 Order printed copiesOrder

Related articles

We are committed to sharing findings related to COVID-19 as quickly and safely as possible. Any author submitting a COVID-19 paper should notify us at help@hindawi.com to ensure their research is fast-tracked and made available on a preprint server as soon as possible. We will be providing unlimited waivers of publication charges for accepted articles related to COVID-19. Sign up here as a reviewer to help fast-track new submissions.