VLSI Design

VLSI Design / 1998 / Article
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Computational Electronics

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Volume 8 |Article ID 035648 | https://doi.org/10.1155/1998/35648

Michael S. Obrecht, Edwin L. Heasell, J. Vlach, Mohamed I. Elmasry, "Transient Phenomena in High Speed Bipolar Devices", VLSI Design, vol. 8, Article ID 035648, 6 pages, 1998. https://doi.org/10.1155/1998/35648

Transient Phenomena in High Speed Bipolar Devices

Abstract

A new numerical method is applied to the analysis of the charge partitioning in the quasi-neutral base of a BJT. The results show that the conventional, 1:2 collector/ emitter partitioning is not valid in general. High level injection increases the collector fraction, whilst fast switching decreases it.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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