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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 349-353
http://dx.doi.org/10.1155/1998/37965

A New HEMT Breakdown Model Incorporating Gate and Thermal Effects

Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Lutfi Albasha, Christopher M. Snowden, and Roger D. Pollard, “A New HEMT Breakdown Model Incorporating Gate and Thermal Effects,” VLSI Design, vol. 8, no. 1-4, pp. 349-353, 1998. doi:10.1155/1998/37965