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VLSI Design
Volume 6, Issue 1-4, Pages 3-7
http://dx.doi.org/10.1155/1998/38125

Quantum Kinetic Transport under High Electric Fields

1NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan
2Institute of Applied Physics, University of Tsukuba, lbaraki, Tsukuba 305, Japan

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Nobuyuki Sano and Akira Yoshii, “Quantum Kinetic Transport under High Electric Fields,” VLSI Design, vol. 6, no. 1-4, pp. 3-7, 1998. https://doi.org/10.1155/1998/38125.