VLSI Design

VLSI Design / 1998 / Article
Special Issue

Computational Electronics

View this Special Issue

Open Access

Volume 8 |Article ID 39048 | 6 pages | https://doi.org/10.1155/1998/39048

Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes


Employing a recently developed efficient cellular automaton technique for solving Boltzmann’s transport equation for realistic devices, we present a detailed study of the carrier dynamics in GaAs avalanche p-i-n (IMPATT) diodes. We find that the impact ionization in reverse bias p-i-n diodes with ultrathin (less than 50 nm) intrinsic regions is triggered by Zener tunneling rather than by thermal generation. The impact generation of hot carriers occurs mainly in the low-field junction regions rather than in the high field intrinsic zone. The calculations predict significantly more minority carriers on the n-side than on the p-side.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

More related articles

0 Views | 0 Downloads | 0 Citations
 PDF  Download Citation  Citation
 Order printed copiesOrder

Related articles

We are committed to sharing findings related to COVID-19 as quickly and safely as possible. Any author submitting a COVID-19 paper should notify us at help@hindawi.com to ensure their research is fast-tracked and made available on a preprint server as soon as possible. We will be providing unlimited waivers of publication charges for accepted articles related to COVID-19. Sign up here as a reviewer to help fast-track new submissions.