VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 041787 | https://doi.org/10.1155/1998/41787

H. Ueno, S. Yamakawa, C. Hamaguchi, K. Miyatsuji, "Monte Carlo Simulation of HEMT based on Self-Consistent Method", VLSI Design, vol. 6, Article ID 041787, 4 pages, 1998. https://doi.org/10.1155/1998/41787

Monte Carlo Simulation of HEMT based on Self-Consistent Method


Device simulation of HEMT (High Electron Mobility Transistor) has been carried out by ensemble Monte Carlo simulation, where two-dimensional motion of electrons confined in GaAs region at GaAs/AIGaAs heterointerface is taken into account. In order to develop a realistic device simulator of HEMT, we divide the channel region in meshes, and Schrödinger and Poisson equations are solved self-consistently to obtain electronic states of the twodimensional electrons in a mesh. In addition the real space transfer from GaAs layer into AIGaAs barrier layer is taken into account.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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