H. Ueno, S. Yamakawa, C. Hamaguchi, K. Miyatsuji, "Monte Carlo Simulation of HEMT based on Self-Consistent Method", VLSI Design, vol. 6, Article ID 041787, 4 pages, 1998. https://doi.org/10.1155/1998/41787
Monte Carlo Simulation of HEMT based on Self-Consistent Method
Device simulation of HEMT (High Electron Mobility Transistor) has been carried out by ensemble Monte Carlo simulation, where two-dimensional motion of electrons confined in GaAs region at GaAs/AIGaAs heterointerface is taken into account. In order to develop a realistic device simulator of HEMT, we divide the channel region in meshes, and Schrödinger and Poisson equations are solved self-consistently to obtain electronic states of the twodimensional electrons in a mesh. In addition the real space transfer from GaAs layer into AIGaAs barrier layer is taken into account.
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