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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 501-505

Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices

Department of Physics, National Tsing Hua University, Hsinchu 300, ROC, Taiwan

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In recent years, artificially layered microstructure have been considered as candidates for better thermoelectrics. In this work we examine transport properties of the type-II broken-gap InAs/GaSb superlattice. We use the effective bond orbital model for an accurate description of the band structures. Theoretical results of thermoelectric transport coefficients and the dimensionless figure of merit for an (8, 8)-InAs/GaSb type-II superlattice are presented.